Semiconductor Lasers - Free download as Powerpoint Presentation (.ppt), PDF File (.pdf), Text File (.txt) or view presentation slides online. OPSL Advantages . and Benefits SHG BRF OPS1 OPS2 THG Example of a Multichip Cavity Design. ACKNOWLEDGEMENTS I am very grateful to all of those who have helped me see this work come to fruition. • A semiconductor (silicon) is a material which acts like an insu Part one introduces the fundamentals of semiconductor lasers, beginning with key principles before going on to discuss photonic crystal lasers, high power semiconductor lasers and laser beams, and the use of semiconductor lasers in ultrafast pulse generation. Vertical cavity surface emitting lasers (VCSEL), on the other hand, have a large gain saturation energy because of the large active area. DHJ Laser Diode 25 February 2009. [5] E. K. Lau, H.-K. 32, pp. They are of very small size (0.1 mm long), efficient, portable and operate at low power. Sung, and M. C. Wu, "Scaling of resonance frequency for strong injection-locked lasers," Opt. Part two then reviews applications of visible and near-infrared emitting lasers. Experimental demonstration of their successful application to 1.3µm and 1.5µm InGaAsP/InP MQW lasers will be shown. 3373-3375, 2007. The homojunction lasers were replaced by double-heterostructure (DH) lasers which can operate at room temperatures. Physics, University of Houston(2001) Thesis adviser: Dr. Han Le Submitted to the Department of Electrical and Computer Engineering in partial fulfillment of the requirements for the Doctor of Philosophy At the University of Houston Oct. 2003. Now the semiconductor lasers are also made to emit light almost in the spectrum from UV to IR using different semiconductor materials. The history of the laser dates back to at least 1951 and an idea of Townes, who wanted to use ammonia molecules to amplify microwave radiation. Semiconductor lasers are one of the popular optical communication light source for data transmission. Disadvantage of the conventional semiconductor laser The band gap decides the wavelength of the laser. For long wavelength quantum well (QW) semiconductor lasers, operating at around 1550nm, InP based latticed matched III-V semiconductors draw considerable interest because of their usage in low-loss optical fibre communications [1]. The working medium is a PN junction or a PIN junction. semiconductor laser devices are then fabricated using the developed process and characterization is performed to assess device performance with industrial standard methods. Tunable semiconductor lasers Thesis qualifying exam presentation by Chuan Peng B.S. • Three of the papers were published in the same volume of APL; the other one in PRL - Marshall Nathan of IBM, - Robert Rediker of MIT, - Robert Hall and Nick Holonyak from two different General Electric Company labs. Homojunction means the laser devices use the same material for both the p and n sides of the junction. Semiconductor Laser _____ 5.0 Introduction Laser is an acronym for light amplification by stimulated emission of radiation. Optically Pumped Semiconductor Laser. The energy difference between the band whose levels are usually occupied (valence band) and that whose levels are unoccupied (conduction band) is called bandgap. , * Differentiators MS with 10+ years of experience CMOS Imaging. The platelet consists of two parts having an electron conductivity (n-type) and hole conductivity (p-type). LEDs and Semiconductor Lasers Course Introduction You will learn about semiconductor light emitting diodes (LEDs) and lasers, and the important rules for their analysis, planning, design, and implementation. The early semiconductor lasers are Homojunction Lasers, which can operate cw only at cryogenic temperatures (like T=77K). Modern semiconductor laser design approaches extensively use doping profile and waveguide geometry tuning. ON Semiconductor has developed a global marketing, sales and field quality network to supply its customers with quality products, information and services. This crystal is cut in the form of a platter having thickness of 0.5μmm. High power ultrashort optical pulses can thus be generated by mode locking a VCSEL. This is commonly accomplished with Bragg gratings monolithically integrated into the laser structure. • A semiconductor laser diode is a device capable of producing a lasing action by applying a potential difference across a modified pn-junction. • An insulator is a material which is a very poor conductor of ele ctricity (such as glass). A fabricated device has 18W power and 11% conversion efficiency. At early stage, high power semiconductor lasers have been mainly applied in pumping of solid-state lasers and fiber lasers. The bandgap changes as a function of the temperature of the semiconductor… Light is emitted at a junction between two regions of opposite doping as shown in gure 4. There are two major commercial families of semiconductor lasers — those grown on GaAs substrates and those grown on InP substrates. Today it came to be indispen - sable for our life as optical components connecting home and the Internet as well as long-distance large-capacity trunk networks. The temperature has a great influence on the PN junction, 26 and the semiconductor laser’s threshold characteristics and output power wavelength can both be affected by changes of temperature. 3 Semiconductor Lasers 3.1 Basic Physics In a semiconductor laser, the gain medium consists of layers of doped semi-conducting material. In the waveguide shown above, periodic grooves have been etched in the top surface of the InGaAsP waveguide before the growth of … The semiconductor laser diode is just such an example with an approximately 30 year development from conceptual demonstration to a mature technology in volume production. Semiconductor Manufacturing Process Ppt. Optoelectronics, Sichuan University(1994) M.S. There is a great variety of different semiconductor lasers, spanning wide parameter regions and many different application areas: Small edge-emitting laser diodes generate a few milliwatts (or up to 0.5 W) of output power in a beam with high beam quality.They are used e.g. Semiconductor Lasers by Alan Mar ECE Technical Report #94-25 Department of Electrical and Computer Engineering University of California, Santa Barbara October, 1994 . Chaos in semiconductor lasers with optical feedback: theory and experiment Abstract: The authors present a detailed theoretical and experimental investigation of the nonlinear dynamics of a semiconductor laser with optical feedback. in laser pointers, in CD players, and for optical fiber communications. 2 these design tools. In-plane semiconductor lasers can be mode locked to generate ultrashort pulses, but the output power is small because of the gain saturation limitation. semiconductor laser based on gallium arsenide crystals (GaAs). When current starts to flow spontaneous emission kicks in. Structures and Semiconductor DFB Lasers 13.1 Distributed Feedback (DFB) Gratings in Waveguides 13.1.1 Introduction: Periodic structures, like the DBR mirrors in VCSELs, can be also realized in a waveguide, as shown below in the case of a InGaAsP/InP waveguide. 6609-6618, 2008. Like dye molecules, semiconductors are made from materials consisted of bands of energy levels (many particles in a small box). Viewers will get knowledge about the construction of semiconductor laser. semiconductor lasers demonstrating > 100-GHz resonance frequencies and 80-GHz intrinsic bandwidths," Opt. A semiconductor laser diode consists of several parts: Metal contact P-type material Active region (n-type material) N-type material Metal contact From the picture one can see, that in principle you have the same structure like a diode where you have recombination of charge carriers in the active region. 16, pp. Express, vol. The active medium is a p-n junction diode made from the single crystal of gallium arsenide. Specifically, the pump wavelength merely needs to be shorter than the band gap of the semiconductor laser in OPSL, … You will also apply your knowledge through challenging homework problem sets to cement your understanding of the material and prepare you to apply in your career. Semiconductor lasers can be made single-frequency lasers by introducing additional wavelength-selective elements into the laser cavity that select only one of the longitudinal modes. Semiconductor lasers work by subjoining the energizing working medium additionally. Catastrophic optical damage in semiconductor lasers. Lett., vol. Inherent Reliability: Efficient and simple, pumping of the semiconductor gain medium is another advantage over other diode-pumped laser types. The mode of operation is somewhat di erent than that of the laser described in the previous chapter. are used for ultraviolet lithography in the semiconductor industry and laser surgery. • A conductor is a material which “conducts” electricity easily (su ch as metals). SOAs amplify incident light through stimulated emission. These are widely used in Optical fibre communications, in CD players, CD-ROM Drives, optical reading, laser printing etc. These dyes can be excited by optically with Argon lasers for example and emit at 390-435nm (stilbene), 460-515nm (coumarin 102), 7.3. When the light traveling through the active region, it causes these electrons to lose energy in the form of photons and get back to the ground state. 7.3.2 Dye Lasers: The laser gain medium are organic dyes in solution of ethyl, methyl alcohol, glycerol or water. Figure shows the basic construction of semiconductor laser. 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